Focused Ion Beam Sample Preparation for In Situ Thermal and Electrical Transmission Electron Microscopy

Radić D, Peterlechner M, Bracht H

Research article (journal) | Peer reviewed

Abstract

A focused ion beam (FIB) technique describing the preparation of specimens for in situ thermal and electrical transmission electron microscopy is presented in detail. The method can be applied to a wide range of materials and allows the sample to be thinned down to electron transparency while it is attached to the in situ chip. This offers the advantage that the specimen can have a quality in terms of contamination and damage due to the ion beam that is comparable to samples prepared by means of conventional FIB preparation. Additionally, our technique can be performed by most commercially available FIB devices and only requires three simple, custom stubs for the procedure. This should enable a large userbase for this type of sample fabrication. One further benefit of our technique is that the in situ chip can be reused to create another sample on the same chip. The quality of the samples is demonstrated by high-resolution transmission electron microscopy as well as electron energy loss spectroscopy.

Details about the publication

JournalMicroscopy and Microanalysis
Volume27
Issue4
Page range828-834
Statusaccepted / in press (not yet published)
Release year2021
Language in which the publication is writtenEnglish
DOI10.1017/S1431927621012022
Link to the full texthttps://www.cambridge.org/core/product/identifier/S1431927621012022/type/journal_article
KeywordsKey words focused ion beam; MEMS chips; in situ; sample preparation; transmission electron microscopy

Authors from the University of Münster

Bracht, Hartmut
Institute of Materials Physics
Peterlechner, Martin
Professorship of Materials Physics (Prof. Wilde)
Radic, Dražen
Professorship of Materials Physics (Prof. Wilde)