Creation of a single SiV center in nanodiamond by ion implantation

Buskasper, Tim; Schuck, Carsten

Abstract

Single photon emitters are a crucial component in the further development of quantum technologies such as quantum computers or quantum key distribution. For this purpose, especially group IV defects in diamond are promising candidates due to their robustness, short lifetime, and large Debye-Waller factor. However, the production of a single color center in (nano)diamonds remains a persistent challenge. Here, we report on the successful generation of SiV centers in nanodiamonds through ion implantation using a focus ion beam technique, followed by thermal post-treatment. Notably, we present the creation of both: ensembles and a single SiV center in a nanodiamond. The single SiV center exhibits a lifetime of t1=(2.40± 0.17) ns and g(τ=0)=0.08. Our fabrication process is enhanced by an automatic mark detection system in our FIB system and in combination with our precise nanoparticle placement technique, the creation approach becomes scalable and semi-automatable. Furthermore, integration of the single nanodiamond into nanophotonic circuits is feasible, paving the way for fully integrated nanophotonic devices.